| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 나노 및 생체재료 |
| 제목 | Thermal Annealing Effects on Be doped GaN films grown via molecular beam epitaxy using a single GaN precursor |
| 초록 | Thermal annealing on Be doped GaN films were investigated using a single GaN precursor via molecular beam epitaxy on sapphire (0001) at the substrate temperature of 620 ˚C. The Be cell temperatures used are 1000-1100 ˚C ranges. Post-growth thermal treatment at 800 ˚C in nitrogen ambient using rapid thermal annealing equipment indicated almost non-variation and decrease for the resistivity of GaN:Mn with and without Be doping, respectively. Annealing in environments of vacuum and argon ambients were also performed. This work was supported by ReCAMM |
| 저자 | Hyunjin Cho1, Cunxu Gao2, Fucheng Yu1, Se Young Jeong2, Dojin Kim1, Chang-Soo Kim2 |
| 소속 | 1Department of Materials Science and Engineering, 2Chungnam National Univ. |
| 키워드 | single GaN precurso; Be doped GaN; Thermal Annealing Effect; MBE |
