| 학회 |
한국재료학회 |
| 학술대회 |
2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 |
14권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Influence of grain size on optical and electrical properties of ZnO and Ga doped ZnO thin films by heat treatment |
| 초록 |
Polycrystalline ZnO and Ga doped ZnO (GZO) films are deposited on glass substrate by RF magnetron sputtering at room temperature. The characteristics of ZnO and GZO films are investigated with X-ray diffraction measurement, UV-VIS-NIR spectrophotometer (250 ~ 1200nm) and hall measurement system. The post-growth heat treatment of these films is carried out in N2 ambient in the temperature range 400~600 ℃ for 30 min and an hour. Both ZnO and GZO films have different changing behavior of structural and optical properties by annealing. To use transparent conductive films such as solar cell, films should have not only high transmittance but also good electrical property. Although as deposited GZO films have better electrical properties than ZnO films, GZO films have not good transmittance properties. Consequently, we succeed that the transmittance of GZO films was improved by heat treatment. |
| 저자 |
J.S. Lee1, J.S.Cho2, D.H. Kim3, M.H. Jeon1
|
| 소속 |
1Department of systems engineering, 2Center for Nano Manufacturin, 3InJe Univ. |
| 키워드 |
ZnO; Ga doped; Annealing
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| E-Mail |
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