| 학회 |
한국재료학회 |
| 학술대회 |
2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 |
14권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Study of annealing influence on properties of ZnO thin Films deposited by RF Magnetron Sputtering |
| 초록 |
We investigate structural and electronic properties of polycrystalline ZnO films deposited on SiO2 by RF Magnetron Sputtering at room temperature. Then, the as-deposited samples are annealed at different temperatures ranging from 500'c to 900'c under Ar ambient respectively. The structural properties of ZnO thin films are analyzed by x-ray diffraction (XRD), atomic force microscope (AFM) and field-emission scanning electron microscopy (FE-SEM). The hall effect measurement is conducted to find the electrical properties of the thin films. The results indicate that the annealing process can improve crystalline and electrical properties of the ZnO thin films. |
| 저자 |
J. S. Cho1, J. S. Lee2, D. H. Kim3, M. H. Jeon1
|
| 소속 |
1Department of Nano System Engineering, 2Center for Nano Manufacturing, 3Inje Univ. |
| 키워드 |
ZnO; annealing
|
| E-Mail |
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