| 학회 | 한국재료학회 |
| 학술대회 | 2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 | 14권 1호 |
| 발표분야 | 구조재료 |
| 제목 | The effect of electron irradiation on defect generation into natural colorless sapphire |
| 초록 | In this paper, the effect of electron irradiation on natural sapphire is studied. It is confirmed that the effect of electron irradiation on defect generation into natural sapphire. It is well known that color shift natural sapphire is produced by diffusion treatment in a high temperature (~1600℃) region and a long time (~100 hrs.). Because natural sapphire has remarkable hardness and thermal stability. For these reasons, we have suggested that electron irradiation can generate the defect into natural sapphire for diffusion pass. In this paper, natural colorless sapphire is prepared by electron irradiation process and then Cr diffusion treatment was used 1500℃ and 50 hrs. in air ambient. In order to investigate irradiated natural sapphire, PL was used for defect level observation. And, EPMA, in-situ EDX in FESEM and XPS was used for diffused element detected into natural sapphire. The remarkable result reported here is that the abnormal increase in defect level called by F2-center is observed PL data of irradiated natural sapphires. In addition, no increased F2-center is observed for non-irradiated case. EPMA and in-situ EDX data shows that Cr was detected in depth from irradiated natural sapphire surface. In case of non-irradiated natural sapphire, Cr was detected only surface. Furthermore, XPS data shows that Cr into non-irradiated sapphire appears to exist below detection limit. This work was financially supported by the Korean Science and Engineering Foundation (KOSEF 2007-01478). |
| 저자 | 안지현, 서진교, 박종완 |
| 소속 | 한양대 |
| 키워드 | Electron irradiation; Defect level; natural sapphire; Cr diffusion; Thermal annealing |
