| 학회 |
한국재료학회 |
| 학술대회 |
2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 |
19권 1호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Studies on the formation and characterization of MoS2 interfacial layer between Cu2ZnSnS4 and Mo layers |
| 초록 |
Cu2ZnSnS4 (CZTS) thin films were synthesized by sputtered Cu/SnS2/ZnS stacked metallic precursors followed by sulfurization. The sulfurization was carried out in sealed quartz tube for 1 h in a conventional furnace. From Field emission scanning electron microscopy and transmission electron microscopy results, the MoS2 interfacial layer for the sulfurized CZTS thin films were observed over 500 °C and its thickness increased with increasing sulfurization temperatures. In addition, the Cu-out diffusion behavior in the MoS2 layer was observed at 580 °C. Further the detailed analysis and discussion of MoS2 thin layer such as atomic alignment, defects, and interface of the CZTS/MoS2/Mo structured thin films will be discussed. |
| 저자 |
유영웅1, 김인영2, 신승욱3, 문종하2, 이정용3, 김진혁2, 김광영1
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| 소속 |
1한국생산기술(연), 2전남대, 3한국과학기술원 |
| 키워드 |
CZTS; Cu/SnS2/ZnS metallic precursor; Effect sulfurization temperature
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| E-Mail |
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