| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | Remote epitaxy of GaN microrod heterostructures for deformable light-emitting panel and wafer recycle |
| 초록 | Deformable, freeform devices are essential for upcoming wearable, space-saving, and curved surface-mountable electronics [1]. For deformable lighting devices, semiconductor light-emitting diodes (LEDs) are fascinating because of its long lifetime, high output power, high quantum efficiency, and ease of wavelength tuning in a wide spectral range from infrared to ultraviolet [2,3]. Nevertheless, the rigid, brittle properties of semiconductor materials in a film form or with wafers have restricted their use in the applications unless they have been minutely diced and stamp-printed [3]. Herein, we report on a method of fabricating a deformable LED panel via remote heteroepitaxy of GaN microrod (MR) p–n junction arrays on c-Al2O3 substrate across graphene interlayers. The use of graphene as a growth template allows transfer of the MR arrays from substrate to copper plate, and the device geometry of spatially separate MR arrays is suitable for flexible LED panel in diversely flexural forms without severe device performance degradation. Furthermore, the native wafer is recycled after the overlayer MRs delamination, which consistently re-yields the flexible LED panels over again. The remote heteroepitaxial relation between GaN overlayer and Al2O3 wafer across graphene is observed by atomic-resolution scanning transmission electron microscopy (STEM), and the density-functional theoretical simulations clarify how the remote heteroepitaxy is made possible across graphene. This study expands the epitaxy technique realm into the fabrication of deformable semiconductor devices and wafer recycle. References [1] J. A. Rogers et al. Science 327, 1603 (2010). [2] Y. J. Hong et al. Adv. Mater. 24, 5284 (2011). [3] S. Nakamura et al. Science 281, 956 (1998) [4] Carlson et al., Adv. Mater. 24, 5284 (2012). |
| 저자 | 정준석, 홍영준 |
| 소속 | 세종대 |
| 키워드 | <P>remote epitaxy; deformable light-emitting diode panel; wafer recycle; GaN; microrod heterostructures</P> |
