| 학회 | 한국재료학회 |
| 학술대회 | 2004년 봄 (05/14 ~ 05/14, 강릉대학교) |
| 권호 | 10권 1호 |
| 발표분야 | Sensor |
| 제목 | 페라이트 기판에 의한 planer Hall effect에 관한 연구 |
| 초록 | InSb semiconductor has been widely used as Hall sensor owing to its high-mobility and high ordinary magnetoresistance (OMR) features. Since high MR of InSb was found with a ideal combination of OMR and geometric MR (GMR)[1], it has been attracted as a potential candidate for very sensitive magnetic field sensor. In the study, we carefully investigated MR behavior of InSb on two different substrates such as Si and NiZn ferrite and explore the possibility of InSb thin film available for low magnetic field sensor. 0.9㎛ thick InSb film was thermally evaporated onto Si and ferrite substrates respectively. Hall device was fabricated using photolithography and planer Hall(PH) effect was measured in a magnetic field perpendicular parallel to InSb thin film surface. A strange PH behavior was found on a ferrite substrate in a low field range of -50~50 Oe. This abnormal change in PH has a linear field dependence of 10 mΩ/Oe and immediately returns to ordinary PH curve without leaving the saturation. This probably due to the fringe field from local Bloch walls of ferrite beneath the InSb Hall cross. Reference [1] S. A. Solin, et. al., Science 289, 1530 (2000) [2] S. Zelakiewicz, et. al., Appl. Phys. Lett. 80, 3204 (2002) |
| 저자 | 김원용1, 장준연1, 한석희1, 김희중1, 이우영2 |
| 소속 | 1한국과학기술(연), 2연세대 |
| 키워드 | InSb; planer Hall effect; ferrite |
