| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | The Characteristics of Field Effect Transistor using Tin Disulfide by Atomic Layer Deposition |
| 초록 | Transition metal dichalcogenides (TDMCs) are extensively researched to apply in the electronic devices due to their suitable bandgap, high carrier mobility, flexibility and so on. TMDCs are MX2 stoichiometric compounds consisting of a transition metal (M) and chalcogen atoms (X). These are weakly bonded to other X-M-X layers by van der Waals forces, and they have a hexagonal crystal structure. Most of TMDCs are generally formed by processing methods such as a mechanical exfoliation, and chemical vapor deposition (CVD). Mechanical exfoliation has the advantage that single- or few-layer TMDCs with high quality can be obtained easily at a low price, but this are not compatible with current integrated circuit manufacturing processes. The CVD which is compatible with current device processes can be used to deposit a film uniformly over a large area. However, CVD process is usually conducted relatively high temperatures. In this study, we will report various properties of tin disulfide (SnS2). SnS2 has n-type electrical properties with bandgap of 2.1-3.0 eV. And SnS2 is good candidate to compete with current TMDC 2D materials. We deposited SnS2 using Tetrakis(dimethylamino)tin and hydrogen sulfide at 150°C with thermal atomic layer deposition (ALD) method. ALD can provide high-quality films at low temperatures compared to previously mentioned process methods and can deposit angstrom (Å)-level thin films over large areas. In order to improve quality and crystallinity of SnS2, step annealing was conducted below 350 °C in the tube furnace. The characteristics of step-annealed SnS2 were analyzed by various tools such as XRD, RAMAN, TEM and XPS. The interlayer spacing of high-quality SnS2 was measured to be about 0.6 nm. The electrical properties of FET using SnS2 were analyzed by probe station (I-V measuring system). We will present more results in the Meeting. And we think that SnS2 formed by ALD has good potential for using 2D SnS2 in flexible electronic devices. |
| 저자 | Giyul Ham1, Seokyoon Shin2, Juhyun Lee1, Namgue Lee2, Hyeongtag Jeon1 |
| 소속 | 1Division of Materials Science and Engineering, 2Hanyang Univ. |
| 키워드 | <P>tin disulfide; atomic layer deposition; transistor</P> |
