| 학회 | 한국재료학회 |
| 학술대회 | 2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 | 25권 2호 |
| 발표분야 | 특별심포지엄5. 초고속 저전력 광 데이터 처리용 소자 심포지엄-오거나이저:송용원(KIST) |
| 제목 | 저차원 나노 반도체 소재 기반 광잔자 소자 응용 개발 Low dimensional semiconductors based optoelectronic applications |
| 초록 | Low dimensional semiconducting materials such as colloidal quantum dots (QDs) and two-dimensional van der Waals (2D vdWs) atomic crystals are an emerging class of new materials that can provide important resources for future electronics and materials sciences due to their unique physical properties. Various colloidal QDs have been synthesized and developed for optoelectronic device applications. 2D vdWs materials have been extensively studied and prototypes of electronic and optoelectronic devices, such as logic circuits, amplifiers, and phototransistors, were also demonstrated. In the first part, we introduce a new approach to fabricate PbS QD sensitized IGZO hybrid phototransistors for cost-effective NIR detection. The PbS QD can be functionalized directly onto the surface of the IGZO TFT to create a new bi-functional optoelectronic device: a gate-tunable, highly sensitive, and easily integrated NIR-sensing three-terminal phototransistor. We demonstrate an NIR (1300 nm) imager using photo-gating inverter pixels based on PbS/IGZO phototransistors at an imaging frequency of 1 Hz with a high output voltage photo-gain of ~4.9 V (~99%), as shown in figure. In the second part, we report 1D ZnO nanowire (n-type)-2D WSe2 nanosheets (p-type) heterojunction diodes for photo detection and imaging processes. This heterojunction device exhibits spectral response from ultraviolet (400 nm) to near-infrared (950 nm). In addition, prototype visible imagers are demonstrated using ZnO-WSe2 heterojunction diodes as an imaging pixels. |
| 저자 | 황도경, 안종태, 최현태, 강지훈, 박민철 |
| 소속 | 한국과학기술(연) |
| 키워드 | <P>저차원 반도체; 양자점; 반데르발스 소재; 광전자소자</P> |
