| 학회 |
한국재료학회 |
| 학술대회 |
2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 |
27권 1호 |
| 발표분야 |
특별심포지엄 3. 미래 LED 디스플레이재료 심포지엄-오거나이저: 이인환(고려대), 홍영준(세종대) |
| 제목 |
MOCVD pulsed-mode growth of III-nitride nanorod arrays for optoelectronic applications |
| 초록 |
III-nidtride-based wide bandgap semiconductor materials have been extensively studied over the several decades owing to desirable material properties for high efficiency semiconductor devices. Especially, nanoscale architectures of III-nitrides inspire the outstanding performance of light-emitting devices by providing several merits: suppression of the quantum-confined Stark effect, enhanced indium incorporation, tuneable emission spectrum by adjusting the diameter and/or external bias and large emission area. It has been employed several approaches to form the architecture of III-nitride nanorod array. In this talk, our works to form III-nitride nanorods are presented including both bottom-up and top-down techniques. Especially, selective-area epitaxy via MOCVD pulsed-mode growth is mainly mentioned. Growth behaviors are compared among various material templates by characterizing material and optical properties of nanorod arrays. The growth and characterizations of InGaN/GaN core–shell nanorods are also reported for the applications of optoelectonic devices. |
| 저자 |
배시영 |
| 소속 |
한국세라믹기술원 |
| 키워드 |
<P>Wide bandgap semiconductor; nanorod; selective area growth; pulsed-mode growth; MOCVD</P>
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| E-Mail |
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