| 초록 |
Low temperature polycrystalline Si (LTPS) transistors have been recognized as one of the powerful backplanes for next-generation flat panel displays, due to high mobility of charge carriers, artificial control on carrier types, and Si-based technology. The LTPS transistors have been successfully combined with organic light-emitting diodes in the active matrix configuration. The LTPS transistors are critically dependent on Si crystallization, gate dielectrics and ion doping/activation. Such quality control is based on both qualitative and quantitative characterizations in Si crystallization and ion activation. With the aid of high resolution imaging capability, the constituent components can be monitored using Raman spectroscopy and Electron Microscopy. The Raman analysis allows for the quantification of amorphous and crystalline amounts present in crystallized Si thin films prepared on glass substrates. The quantification is highly associated with the vibration modes occurring in Si materials. The current work demonstrates the feasibility as a standard monitoring tool of evaluating the structural components, based on two different case works in Si crystallization and ion activation. The Raman information is corroborated with electrical information and electron microscopy characterizations. The implications of Raman Spectroscopy are discussed towards high-performance LTPS transistor technology. |
