| 학회 |
한국재료학회 |
| 학술대회 |
2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 |
22권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Enhancement in performance of Cu2ZnSn(S,Se)4 solar cell by sandwiching ZnO barrier layer between back contact Mo and absorber layer |
| 초록 |
Recently cost effective and non-toxic Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have gained a lot of interest within the photovoltaic community. However, the detrimental facts like secondary phases and voids in absorber layer has yet to be overcome. Herein, we have tried to reduce secondary phases and voids through incorporation of ZnO barrier layer between Mo substrate and absorber layer. The ZnO barrier layer was deposited by RF-sputtering technique with ZnO target as the source. The prepared samples were characterized by X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy and J-V characteristics; to investigate the structural, morphological and photovoltaic properties of samples. The results reveals that the phase pure ZnO nanolayer has been successfully sandwiched between Mo and CZTSSe. The J-V characteristics depicts beneficial role of ZnO barrier layer. The enhancement in solar cell performance on incorporation of ZnO layer can be attributed to reduction of secondary phases and voids in absorber layer. |
| 저자 |
Chang Sik Go1, Jin Hyeok Kim1, In Young Kim2, Jong Ha Moon1
|
| 소속 |
1Chonnam National Univ., 2Gwangju Institute of Science and Technology |
| 키워드 |
ZnO; thin film; solar cell; Nanolayer; Sputter; Barrier
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| E-Mail |
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