| 학회 | 한국재료학회 |
| 학술대회 | 2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 | 17권 2호 |
| 발표분야 | B. Nanomaterials and Processing Technology(나노소재기술) |
| 제목 | Four-level memory characteristics of Nonvolatile Memory-cell Embedded with Fe Nanocrystals Surrounded with FeO and Fe2O3 Tunneling Barrier |
| 초록 | We investigated that memory characteristics of nonvolatile memory-cell embedded with Fe nanocrystals surrounded with FeO and Fe2O3 tunneling barrier were depended on Fe nanocrystals size and distribution surrounded with iron oxide (FeO and Fe2O3) tunneling barrier. The memory-cell was fabricated with the device structure of Al / Alq3 (Aluminum tris (8-hydroxyquinoline)) / Fe nanocrystals surrounded with iron oxide / Alq3 / Al. The memory-cell showed nonvolatile memory characteristics such as memory margin of ~7.44 x 102 and retention time more than 105 sec. In particular, the memory-cells embedded with Fe nanocrystals showed four-levels of Ion, Iint1, Iinter2 and Ioff state. In this study, we will present the dependence of nonvolatile memory characteristics on evaporation rate of Fe and O2-plasma process time for the formation of the iron oxide. In addition, we demonstrate a current conduction mechanism of nonvolatile memory-cells embedded with Fe nanocrystals. Acknowledgement This work was supported by R&D Program of the Ministry of Knowledge Economy. |
| 저자 | Myung-Jin Song, Jong Dae Lee, Hyun Min Seung, Kyoung Cheol Kwon, Joeng Nam Lee, Jong-Sun Lee, Dong Hyun Yang, Dong Hyun Park, Jea-Gun Park |
| 소속 | Department of Advanced Semiconductor Material Device Development Center Hanyang Univ. |
| 키워드 | organic memory; nanocrystals; nonvolatile |
