| 학회 |
한국재료학회 |
| 학술대회 |
2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 |
19권 1호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Effect of KCN etching on the properties of CuInS2 (CIS) absorber thin films |
| 초록 |
CuInS2 (CIS) absorber thin films were prepared onto soda lime glass substrates by sulfurization of sputtering deposited stacked Cu/In precursor thin films. The Cu-In precursor thin films were sulfurized in the mixture of H2S (5 %) + N2 (95 %) atmosphere. Effect of various KCN etching time was studied on the structural, optical and electrical properties of the CIS thin films was studied. Field-emission scanning electron microscopy showed that the morphology of the CIS thin films was dense and films showed thickness in the range of 2000 nm. X-ray diffraction study on the CIS thin films showed that all the secondary phases can be removed after 6 min. etching. Dark current and cell efficiency results indicated that the photovoltaic properties of sulfurized CIS thin films were strongly related to the KCN etching time. Further, the detailed analysis and discussion of effect of KCN etching on the properties CIS thin films will be discussed. |
| 저자 |
Myeng Gil Gang1, Seung Wook Shin2, Yu Kyung Kim1, Jun Hee Han3, Jae Ho Yun1, Jong-HaMoon2, Jeong Yong Lee1, Jin Hyeok Kim3
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| 소속 |
1Department of Materials Science and Engineering, 2Chonnam National Univ., 3KAIST |
| 키워드 |
CuInS2 (CIS); sulfurization process; KCN etching; thin film solar cells
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| E-Mail |
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