| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Resistive Switching Characteristics of a Pt/TaOx/TiN devices |
| 초록 | Resistive switching Random Access Memory (RRAM) is a promising candidate of next-generation non-volatile memory (NVM) due to its novel features such as high density, fast switching speed, small cell size and simple structure. The resistive switching (RS) mechanisms have been proposed intensively for oxide based RRAM and valence change model is typically observed RS mechanism. In the semiconductor industries, commercially available electrodes including TiN and W are preferable to cost-effective and fabrication-effective memory mass production. In this study, we successfully developed the self-compliant bipolar RS (BRS) phenomenon of Pt/TaOx/TiN geometries under different oxygen flow rates. As the oxygen contents of the TaOx layer increased, the device stability was significantly improved. Also, the surface chemistry of bottom ALD-TiN electrode was investigated using X-ray photoelectron spectroscopy. Based on XPS and I-V results, the self-compliant RS was led by the TiON interfacial layer. Therefore, the stabilities including I-V characteristics, the distribution, and power consumption were improved. To understand the nature of self-compliant RS behavior more detail, we analyzed the electrical conduction mechanisms. As a result, Poole-Frenkel conduction is dominant conduction mechanism for the self-compliant devices in HRS, and ohmic conduction in LRS indicates the formation of conductive filaments. We believe that these results are certainly for most studies on oxide RRAM and that of wide interest and are significant because they can be a simple process framework to improve the thin oxide based device reliability. |
| 저자 | 홍정협, 전형탁, 전희영, 박진규, 장우출, 김현정, 강춘호, 송효석, 김홍기 |
| 소속 | 한양대 |
| 키워드 | RRAM; Resistive Switching; Bipolar RS |
