| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
1Ar+ Ion Cleaning for Graphene-based Electronics |
| 초록 |
Generally, for large-area graphene electronics, graphene grown on Cu foils by chemical vapor deposition needs to be transferred to the substrate. For graphene transfer to the substrate, a polymer layer such as that of poly(methyl methacrylate) (PMMA) is spin-coated on the graphene surface. Further, to fabricate graphene-based electronics, lithographic patterning on the graphene surface is required, and PMMA is also used for such patterning. To remove the PMMA layer after graphene transfer to the substrate and lithographic patterning, a solvent such as acetone is used. However, a very thin polymer residue remains on the graphene surface after the polymer layer removal and this residue can cause many problems. Here, we report a new method for removing the polymer residue on a pristine graphene surface after the transfer of the graphene film from a Cu foil to the substrate. We used a monoenergetic Ar+ ion beam with an energy of less than ~10 eV for removing the residue on the graphene surface, and the residue could be perfectly removed without damaging the graphene surface. By removing the residue perfectly, we were able to fabricate the field-effect transistors (FETs) showed significantly improved electrical properties. |
| 저자 |
Ki Hyun Kim1, Geun Young Yeom2, Ki seok Kim3, You Jin Ji4
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| 소속 |
1School of Advanced Materials Science and Engineering, 2Sungkyunkwan Univ., 32066 Seobu-ro, 4Jangan-gu |
| 키워드 |
Graphene; cleaning; Ar<SUP>+</SUP> ion beam
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| E-Mail |
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