| 초록 |
At present, spiro-OMeTAD is the most widely used HTM in the n-i-p type PSCs.[1-2] However, the spiro-OMeTAD shows low hole mobility and electrical conductivity in their original forms, which affect device performances.[3] Consequently, the p-type dopants, such as Li-TFSI and tBP, were used as additives to improve their charge transport performance.[4] However, the dopants in HTMs can hygroscopic and accelerate the decomposition of the perovskite layer, which can lead to the poor stability of the PSCs device and block commercialization. Therefore, the exploration of doped-free, high-efficiency HTMs has always been the direction of our efforts. Here, a new polymer electron-donor material, Nap-SiBTz3, is designed and synthesized as a dopant-free HTM in PSCs. A champion PCE of 20.79% with a Jsc of 25.01 mA/cm2, Voc of 1.10 V and FF of 75.81% was achieved. Besides, the devices show long-term stability and these studies give useful guidance on exploiting efficient dopant-free HTMs of PSCs. |
