| 학회 |
한국재료학회 |
| 학술대회 |
2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 |
14권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
A study on the photovoltaic device using InAs multi-quantum dot grown by molecular beam epitaxy |
| 초록 |
We studied multi-stacked InAs QD on GaAs hetero structure for solar cell by molecular beam epitaxy (MBE). After the growth of GaAs buffer layer with 0.25um, multi-stacked InAs QD was grown by self-assembly with 0.03ML/s. Then, the structure was capped with n-GaAs and n-AlGaAs. 1, 10, 20 stacks of QD was sandwiched in the p-n junction. The emission intensity of 10 times stacked QD showed higher than 1 and 20 stacked QD. I-V characterization was conducted under AM 1.5 illumination at 100mw/cm2 intensity. A typical I-V characteristic of this solar cell. with an active area of 16mm2, shows an open circuit voltage Voc of 0.82 V, a short circuit current Isc of 10.1 mA, and a fill factor FF of 0.37, leading to an efficiency 3.03%. |
| 저자 |
S.J. Hwangboe1, J.H. Jang2, J.Y. Leem3, D.H. Kim4, M.H. Jeon5
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| 소속 |
1Department of Nano Systems Engineering, 2Center for Nano Manufacturing, 3Inje Univ., 4621-749, 5South Korea |
| 키워드 |
MBE; QD; InAs; TEM
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| E-Mail |
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