| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Hydrogen and Moisture Getter by Porous SiO2/Si Substrate including Various Metals at Room Temperature |
| 초록 | The performances of semiconductor devices are adversely affected by the gaseous impurities such as H2 gas occurred during semiconductor fabrication. The generated hydrogen gas within the device is caused by short lifetime and degradation of the product. To overcome this problem, the getter which is a material widely used to remove impurity gases from various vacuum devices is attached in the vacuum space to maintain vacuum conditions required and to enhance lifetime of the operating devices through the sorption of undesired gases. The existing metal getters have high temperature for activation (＞ 150 oC), resulting in the unavoidable deleterious effects on overall devices. Therefore, it is essential to synthesizing the getter without activation temperature to improve device efficiency and gas-adsorption properties by controlling the structures and getter materials. In the study, we fabricated getter materials using PdOx, SiO2 and rare metals which can be used as getter materials to adsorb H2 gas and moisture. The nanoporous substrate on silicon wafer prepared by etching process can be applied to a high-efficiency gas and moisture absorber due to their large specific surface area. The structure was characterized by SEM, XRD, and XPS. The gas and moisture sorption of getter was obtained by using each the chemisorption, moisture-sorption equipment without activation process. |
| 저자 | 엄누시아1, 임효령1, 조정호2, 좌용호1 |
| 소속 | 1한양대, 2한국세라믹기술원 |
| 키워드 | Getter; Hydrogen Adsorption; Moisture sorption; Porous SiO<SUB>2</SUB>/Si substrate |
