| 초록 |
Near infrared (NIR) organic photodetectors (OPDs) have been extensively studied for use in light-weight optical sensors such as bio-imaging and vehicle detection sensors. Currently, NIR OPDs based on a high-bandgap polymer donor (PD) and low-bandgap non-fullerene acceptor (NFA) showed highly promising OPD performances. In the case of low-bandgap PD-based NIR OPDs, there have been several successful reports, but they showed a relatively high level of dark current density (Jd) and low D* values in the range of 1010 − 1012 Jones. This high Jd in OPDs obviously decreases the D* values in the devices, but more seriously, it provided overestimated R and D* values at low light irradiation in photoconductive mode. Thus, in this study, we synthesized three low bandgap PDs and studied the contributions of Jd on Jph in red-NIR OPDs and suggested how Jd should be handled to calculate R and D* values in OPDs. |
