| 초록 |
Organic light-emitting diodes (OLEDs) are currently increasing the market size due to its excellent efficiency, flexibility and simple fabrication. The hole injection layer (HIL) has significant influence on charge transport and outcoupling efficiency. Copper iodide (CuI) has received great attention for p-type semiconductor due to its large bandgap, high conductivity, optical transparency, proper energy level alignment and its low cost. It also has much higher hole mobility than other p-type organic materials. Thus, a thick CuI film can be applied to improve the yield of large-area OLEDs. To optimize the properties of HIL in OLEDs, a method to control charge carrier density of CuI film should be required. In this study, we suggested Zn doped-CuI as HIL. The Zn-doping can effectively control the carrier density of CuI film and thus, OLED with CuI HIL showed better external quantum efficiency. |
