| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 가을 (10/06 ~ 10/07, 김대중 컨벤션센터) |
| 권호 |
36권 2호 |
| 발표분야 |
유기전자소자용 소재 및 소자(분자전자소재 부문위원회) |
| 제목 |
Characteristics of aluminum oxide layers grown by plasma-enhanced ALD for barrier property enhancement |
| 초록 |
Aluminum oxide layers have been deposited on flexible PES substrates by low frequency plasma-enhanced atomic layer deposition (PEALD) process using trimethylaluminum (TMA) and O2 plasma as precursor and reactant materials, respectively. The effects of plasma power, process pressure and substrate-head distance were investigated with respect to physical and chemical properties of layers such as barrier property, microstructure and chemical composition. At optimized conditions, water vapor transmission rates of the aluminum oxide layers were below the MOCON instrument test limit of ~5×10-3 g/m2day. Aluminum oxide layers grown by low frequency PEALD may enable flexible electronics and display on PES substrates. |
| 저자 |
이종걸, 김성수
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| 소속 |
경희대 |
| 키워드 |
barrier property; plastic substrate; WVTR; ALD; aluminum oxide
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| E-Mail |
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