| 초록 |
CZTSSe is an attractive candidate to replace CdTe, CIGS and silicon based solar cells because of its low cost, earth-abundant element and high light absorption coefficient. Optimization of all layers and interfaces is essential to increase the power conversion efficiency (PCE) of CZTSSe solar cells. Especially, i-ZnO and TCO are one of the important layers in CZTSSe solar cells because they must transmit light to the absorber layer and having conductivity for carrier movement.. Our research group confirmed that the i-ZnO thickness and TCO deposition temperature are related to each other. In this study, the PCE change of the CZTSSe solar cell was confirmed by controlling the i-ZnO thickness and the TCO deposition temperature to 30 to 90 nm and 350 to 500 degrees, respectively. When the high i-ZnO thickness and TCO deposition temperature, the low i-ZnO thickness and TCO deposition temperature were applied, the efficiency of CZTSSe solar cell tended to increase. |
