| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Studying selective boron emitter formed by spin-on dopant to improve the efficiency of n-type Si solar cells |
| 초록 |
To increase solar cell efficiency, highly doped dopant concentration and a wide emitter is needed. However, as the doping concentration increases recombination and degraded quantum efficiency also increases, which is not desirable. By using an inhomogeneous emitter, where doping is high underneath the metal contacts and low in between the contact fingers, contact resistance between metal and semiconductor will lower and surface passivation will get better. In other words, the selective emitter is an effective technology to improve the silicon solar cell performance. Here, we studied how to increase the efficiency by application of selective boron emitter using spin-on dopants (SODs) through rapid thermal processing. The advantages of SODs are controllable doping concentration, easy doping of the dopant concurrent diffusion with no mask and cheap cost. The electrical and structural characterization was made using the solar simulator, EL and SIMS with a comparison to homogeneous emitter solar cells. Through the analysis of the results, front contact quality of the selective emitter cells was found more superior to the homogeneously doped emitter cells. |
| 저자 |
김진솔1, 최동진1, 박현정1, 배수현1, 강윤묵2, 이해석2, 김동환1
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| 소속 |
1고려대, 2KU-KIST 그린스쿨 대 |
| 키워드 |
Silicon solar cell; selective emitter; spin-on dopant
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| E-Mail |
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