| 초록 |
Tin oxide thin films have been widely studied for various applications such as transparent p-type TFT devices, gas sensors, transparent conductive electrode, catalysts, and solar cells. Nevertheless, tin oxide thin film has poor film stability especially for p-type tin oxide. In the present study the influence of various sputtering targets on electrical, optical, and structural properties of tin oxide thin films were investigated to evaluate a film stability with excellent electrical conductivity. RF magnetron reactive sputtering was used, and five different targets (Sn metallic target, SnO ceramic target, and three SnO/Sn composite targets) were evaluated. The substrate temperature was 100°C, and the working pressure was 5mTorr, and the power was ranged from 20~50W. The film thickness was measured by 3D profiler, and the average film thickness was about 200nm. Electrical, optical, and structural properties were measured by Hall effect measurement, UV/Vis spectrometer, and XRD and XPS, respectively. The comparative electrical, optical, and structural study among different sputter targets were conducted and will be presented in detail. |
