| 학회 |
한국재료학회 |
| 학술대회 |
2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 |
24권 1호 |
| 발표분야 |
7. 차세대 태양에너지 재료 및 디바이스(Emerging Solar Energy Materials and Devices)-오거나이저: 신병하 교수(KAIST) |
| 제목 |
Technologies of Zn-based buffer layer in Cu(In,Ga)Se2 thin-film solar cells |
| 초록 |
Cu(In,Ga)Se2 (CIGS) thin-film solar cells are considered to be one of the most promising photovoltaic technologies because of the potential advantage of low-cost and high efficiency. Traditionally, high-efficiency devices contain a CdS buffer layer processed by chemical bath deposition (CBD) between CIGS absorber and transparent front electrode. The use of CdS buffer, however, is undesirable because the Cd element is highly toxic and the CdS buffer layer reduces optical transmittance in short-wavelength range. Because the Zn-based buffer layer can overcome these disadvantages of CdS buffer layer, there are many approaches to use various fabrication methods of S-cracker, reactive sputtering, and CBD. The importance of these contacting layers in polycrystalline thin film solar cells has steadily increased since the interface properties play crucial role to determine the conversion efficiency of the solar cells. In this presentation, the interpretation of CIGS/Zn-based buffer interfaces will be discussed with respect to electronic, chemical, and structural properties. The device characteristics of CIGS solar cells with Zn-based buffer will be also investigated. |
| 저자 |
Yong-Duck Chung, Woo-Jung Lee, Dae-Hyung Cho, Hye-Jung Yu, Won Seok Han
|
| 소속 |
Electronics and Telecommunications Research Institute |
| 키워드 |
Cu(In; Ga)Se<SUB>2</SUB>; Zn-based buffer layer; Chemical bath deposition; Reactive sputtering; Cracker
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| E-Mail |
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