| 초록 |
Flexible resistive random-access memory (RRAM) is attracting significant attention owing to the demand for memory devices for various applications in flexible electronics. However, the realization of reliable, flexible RRAM faces a significant challenge in the fabrication process because of the inherently high thermal sensitivity of plastic substrates. In the case of conventioanl thermal annealing process, it applies heat to the entire device; this can cause deformation of the plastic substrate owing to the long process time at high temperatures. Therefore, it is necessary to develop a process that can improve the RS performance and reliability, and can be applied to flexible substrates. In this study, a high-performance flexible RRAM device is fabricated without the deformation of a plastic substrate by utilizing a precisely controlled UV laser annealing process. The application of laser annealing in an Al/ZnO/Al flexible RRAM improves the crystallinity of ZnO and produces a functional interface layer with sufficient thickness, uniform morphology, improved crystallinity, and abundant O Frenkel pairs. The improved characteristics of the interface layer result in stable resistive switching and performance enhancement of the flexible RRAM. The laser-annealed flexible RRAM exhibits a high on/off ratio, high cycling endurance, and low power consumption. Very importantly, the performance is maintained at a bending radius of up to 5 mm. |
