화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2017년 봄 (04/05 ~ 04/07, 대전컨벤션센터)
권호 42권 1호
발표분야 대학원생 구두발표 (영어발표, 발표15분)
제목 Schottky Barrier Transistors Based on Vertically-Stacked Graphene-IGZO Heterostructures
초록 We demonstrated all-transparent flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene–metal oxide–metal heterostructures and ion gel gate dielectrics. The vertical SB transistor structure was formed by (i) vertically sandwiching a solution-processed indium–gallium–zinc–oxide semiconductor layer between graphene and metallic electrodes, and (ii) employing a separate coplanar gate electrode bridged with a vertical channel through an ion gel. The vertical devices showed high current densities (18.9 Acm–2) and on–off current ratios (> 104) at low voltages. Also we fabricate low-power logic gates based on device assemblies, such as the NOT, NAND, and NOR gates, prepared on a flexible substrate. The facile, large-area, and room-temperature deposition of both semiconducting metal oxide and gate insulators integrated with transparent and flexible graphene opens up new opportunities for realizing graphene-based future electronics.
저자 김성찬, 조정호
소속 성균관대
키워드 Schottky barrier; indium-gallium-zinc-oxide (IGZO); graphene; transistor; vertical
E-Mail jhcho94@gmail.com