| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Sn Doping Effect of The (Pb, La)(Zr, Ti)O3 Film for Dielectric Properties by using Aerosol-Deposition Method |
| 초록 |
Lead Lanthanum Zirconate-Titanate (PLZT) is well-known anti-ferroelectric material. PLZT is one of the PZT materials group, and ferroelectric properties of PLZT have been widely researched for various applications such as actuators, sensors and transducers in the micro electro mechanical systems (MEMS). A-site (Pb-site) of PZT is substituted with the La ion. The differences of ion size and valence electron number between Pb ion and La ion have caused defects in PZT structure. This phenomenon induces the change of the dielectric characters from ferroelectric to anti-ferroelectric. Also, the substitution of Sn into B-site modifies the dielectric properties of the material in the perovskite structure. In other word, the doping of Sn non-polar ion makes polarization–electric field hysteresis loop due to the destruction of long range order. In the present study, the Aerosol Deposition (AD) method was used to deposit Pb0.97La0.02(Zr,Sn,Ti)O3 films on Pt/Ti/SiO2/Si substrate according to the Sn doping concentration. By using AD method, the film has nano-sized grain and that would conduct like the nano domain of relaxor ferroelectric. The phases of films were identified by X-ray diffraction system (XRD) and the microstructures of films were observed by field emission scanning electron microscopy (FESEM). And, the polarization–electric field hysteresis loops were measured by using a standard ferroelectric test system. |
| 저자 |
Min-Geun Choi1, Jungkeun Lee2, Soo-Bin Kang3, Young-Min Kong4, Jungho Ryu1, Woon-Ha Yoon2, Dae-Yong Jeong3
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| 소속 |
1School of Materials Science and Engineering, 2Inha Univ., 3Incheon 402-751, 4Korea |
| 키워드 |
Lead Lanthanum Zirconate-Titanate; Aerosol Deposition; Sn Doping
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| E-Mail |
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