| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
B. Nanomaterials Technology (나노소재기술) |
| 제목 |
Facile fabrication of ZnO Nanostructure Network Transistor by printing method |
| 초록 |
Various ZnO nanostructures were synthesized and ZnO nanostructure-based self-assembled transistors were fabricated. Compared to spindle and flower like nanostructure, the ZnO nanorod (NR) structure showed much stronger gate controllability, and greatly enhanced device performance, demonstrating that this structural variation leads to significant differences of the nanostructure network-based device performance. Also, patterned dry transfer-printing technique that can generate monolayer-like percolating networks of ZnO NRs has been developed. The method exploits the contact area difference between NR-NR and NR-substrate, rather than elaborate tailoring of surface chemistry or energetic. The devices prepared by the transferring method exhibited on/off current ratio, and mobility of ~2.7×104 and ~1.03 cm2/V•s, respectively. Also, they exhibited showing lower off-current and stronger gate controllability due to defined-channel between electrodes and monolayer-like network channel configuration. With multilayer stacks of nanostructures on stamp, the monolayer-like printing can be repeated many times, possibly on large area substrate, due to self-regulating printing characteristics. The method may enable high-performance macroelectronics with materials that have high aspect ratio. |
| 저자 |
Ji-Hyuk Choi, Kyeong- Ju Moon, Joohee Jeon, Jyoti Prakash Kar, Sachindra Nath Das, Dahl-Young Khang, Tae Il Lee, Jae-Min Myoung
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| 소속 |
연세대 |
| 키워드 |
ZnO; nanostructure; micro printing; network structure
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| E-Mail |
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