| 초록 |
To ascertain the protection of flexible organic light-emitting diodes (OLEDs) display from water and oxygen, thin film encapsulation (TFE) is required and amorphous, silicon oxynitride (H:SiON) films have extensively been used in TFE due to its high optical transparency, flexibility as well as its excellent gas barrier properties. By modulating O/N ratio or the extent of hydrogenation in H:SiON, gas barrier properties of thin films would be different. In this study, H:SiON films with various O/N ratios and degree of hydrogenation, were fabricated via a plasma-enhanced chemical vapor deposition (PECVD). Probe gas such as He, H2O and H2 were used to quantify the defect density of each H:SiON thin film through a pinhole model and useful spectroscopic analyses were conducted to clarify its chemical structure. Combining demonstrated results, we surmised the structural formation and possible percolating channel for the gas permeation of each H:SiON thin film. |
