| 초록 |
Cu₂ZnSnS₄(CZTS) thin films were synthesized by sulfurization of stacked Cu/SnS₂/ZnS precursor thin films by sputtering system at different heating rates. The precursor thin films were annealed using commerical furnace in a mixed N2 (95%) + H₂S (5%) atmosphere at 580 °C for 30 min. Effect of heating rate on the structureal, morphological, chemical, and optical properties of CZTS thin films were investigated using X-ray diffraction (XRD) patterns, transmission electron microscopy (TEM), Field emission scanning electron microscopy (FE-SEM), and Raman spectroscopy. The properties of sulfurized CZTS thin films were strongly related to the heating rate for sulfurization process. The CZTS thin film solar cells using sulfurized thin film at 3 °C per min. showed n = 3.12%, Voc = 435 mV, Jsc = 20.11 mA/cm², FF = 35.6, at 0.22 cm² area. Further the detailed analysis and discussion, their properties of the CZTS thin films will be discussed. |
