| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
RF 스퍼터링법으로 제조한 황화주석 박막의 특성에 대한 기판 온도의 영향 |
| 초록 |
SnS is a potentially important photovoltaic and solar conversion material because of its direct optical band gap of ~1.3 eV. This band gap is the optimum range for solar photo-conversion. The optical properties of tin sulfide thin films vary depending on the synthesizing or fabrication method, these properties enable SnS thin films to be used as an absorption layer in the fabrication of heterojunction solar cell. In this work, SnS thin films were deposited onto glass substrates by RF magnetron sputtering at the substrate temperatures in the range of 100-300 ℃. Structural, optical and electrical properties of the SnS thin films were studied by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), UV-Vis spectrophotometer and hall effects measurement. The XRD results confirm that the films are polycrystalline exhibiting orthorhombic structure with preferential orientation along the (111) plane. The values of crystallite size are found to be in the range of 23-30 nm. The percentage transmittance at the wavelength of 1000 nm decreases from 15 % to 50 % with increase in substrate temperature. The optical band gaps of the SnS thin films at various substrate temperatures are in the range of 1.36-1.58 eV. From the results, the substrate temperature is one of the criteria that strongly influence film structure, crystallinity, optical band gap and electrical properties of RF-sputtered SnS thin films. |
| 저자 |
신동혁, 정운환, 남기원, 강소영, 황동현, 손창식
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| 소속 |
신라대 |
| 키워드 |
SnS; sputtering; substrate temperature; solar cell
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| E-Mail |
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