| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 봄 (04/11 ~ 04/12, 대전컨벤션센터) |
| 권호 |
38권 1호 |
| 발표분야 |
고분자구조 및 물성 |
| 제목 |
Sub-10 nm Patterns by Self-Assembly of Silicon-Containing Block Copolymers and Their Electrical Applications |
| 초록 |
Block copolymers with a Si-containing block are particularly attractive due to their high etch contrast and high interaction parameter, which leads to a microphase-separation below 10 nm. I presented a hierarchical strategy for templating of small period PS-b-PDMS block copolymers using a topographical pattern formed from a larger period block copolymer which can itself be templated using features produced by electron-beam lithography. And, I show how patterns consisting of coexisting sub-10 nm spheres and cylinders and sphere patterns with a range of periods can be created using a combination of serial solvent anneal processes and electron-beam irradiation of selected areas of a film of PS-b-PDMS. We also demonstrate sub-10-nm graphene nano-ribbon array field effect transistors which fabricated by PS-b-PDMS line patterns as a lithographical template on chemical vapor deposition (CVD) grown graphene monolayer sheets for the opening band-gap and high on-off ratio FETs. |
| 저자 |
손정곤 |
| 소속 |
한국과학기술(연) |
| 키워드 |
Block Copolymer; Patterning
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| E-Mail |
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