| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
F. 광기능/디스플레이 재료(Optical Functional and Display Materials) |
| 제목 |
Effect of different working pressures on MGZO thin films with transparent conducting characteristics |
| 초록 |
Mg and Ga co-doped ZnO (MxGyZzO, x+y+z=1, x=0.05,y=0.02 and z=0.93) thin films were prepared on glass substrates by RF magnetron sputtering technique with different working pressures from 3 to 9mTorr at 400oC. The effect of different working pressures on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with c-axis preferred orientation without any secondary phase. The diffraction peaks from (0002) plane of ZnO:Ga:Mg thin films were enhanced with increasing the different pressures. The cross-sectional field emission scanning electron microscopy images of MGZO thin films showed that all the thin films have a columnar structure and thickness increased with increasing pressures. The MGZO thin film deposited at the working pressure of 7mTorr showed the best electrical characteristics in terms of the carrier concentration (2.7ｘ1020 cm-3), charge carrier mobility (7.5 cm2V-1s-1), and a minimum resistivity (2.28ｘ10-3 Ωcm). UV-visible spectroscopy studies showed that the MGZO thin films have a high transmittance over 80 % in the visible region and the absorption edge of MGZO thin films were very sharp and shifted toward lower wavelength side from 340 nm to 320 nm with increasing the working pressures. The band gap energy of MGZO thin films were wider from 3.60 eV to 3.72 eV with increasing the working pressures. |
| 저자 |
Yinbo Wang1, Seung Wook Shin2, Kee Seok Jeon3, Jong-Ha Moon4, Jeong Yong Lee5, Jin Hyoek Kim6
|
| 소속 |
1Department of Material Science and Engineering, 2Chonnam National Univ., 3300 Yongbong-Dong, 4Puk-Gu, 5Gwangju 500-757, 6South Korea |
| 키워드 |
Mg and Ga co-doped ZnO; Trans Parent Oxide; RF magnetron sputter; Quaternary compound
|
| E-Mail |
|
