| 학회 | 한국재료학회 |
| 학술대회 | 2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 | 21권 1호 |
| 발표분야 | C. 에너지 재료 |
| 제목 | Physcial property of Indium oxide grown by Atomic Layer Deposition (ALD) using Et2InN(TMS)2] precursor and H2O oxidant |
| 초록 | We studied indium oxide film as transparent conductive oxide (TCO) grown by atomic layer deposition (ALD). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Znin (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of fil thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. Indium oxide thin film is known to have a wide band gap (~3.6eV) and it is a very useful TCO material. In this study, we deposited indium oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor and H2O as oxidant for ALD and investigated the microstructure and optical properties of indium oxide films. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth. |
| 저자 | 조 영 준, 장 효 식 |
| 소속 | 충남대 |
| 키워드 | indium oxide; ALD; TCO; precursor |
