| 초록 |
ZnO has received a great interest for large area optoelectronic devices of flat panel display (FPD) and as a transparent semiconductor and transparent conductive oxide (TCO) in solar cells. In this work, Mg and Ga co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of substrate temperature on the properties of Mg and Ga co-doped ZnO thin films have been investigated. Substrate Temperature was varied from RT to 500oC in the interval of 100oC. Deposition condition are RF power of 70W and working pressure of 1mTorr. All of the thin films show a uniform microstructure, however a noticeable difference in the band gap energy was observed with variation in Substrate Temperature. Thin film of deposition at 500 oC shows the overall best performance among all the thin films with lowest resistivity, carrier concentration and mobility of 3.71 x 10-4 Ωcm, 1.024 x 1021 cm-3 and 16.43 cm2V-1S-1, respectively. Also . Thin film of deposition at 500oC shows the relatively high optical band gap energy of 3.86 eV with high transmittance more than 90 % in visible region, which is prime requirement for the better solar cell performance. |
