| 초록 |
Ultrathin and lightweight organic devices are becoming increasingly important in modern applications such as electronic skin, synthetic textiles and robotics. Organic field-effect transistors (OFETs) have garnered tremendous attention in this sector. The OFETs with a thickness of few micrometers is advantageous in that they can be combined with other devices such as organic light emitting diodes or sensors for various applications. In this study, we present ultrathin OFETs with a total thickness of less than 2μm. To achieve our goal, substrate, gate dielectric, and passivation layer of the OFET components were fabricated by CVD-processing Parylene-C layers. In results, the ultrathin OFETs showed the high field-effect mobilities of ~ 0.5 cm2/Vs and on/off ratios exceeding ~ 105. Such extremes flexibility and lightweight due to the ultrathin OFETs will contribute to the implementation of multifunctional electronic skin which can be worn on the surface of human skin. |
