| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Effect of sulfurization conditions on the characterization of Cu2ZnSnS thin films |
| 초록 | ABSTRACT Cu2ZnSnS4 (CZTS) thin films were synthesized by sputtered Cu/SnS2/ZnS stacked metallic or sulfides precursors. The precursor thin films were carried out the sulfurization using H2S gas atmosphere and the annealed thin films showed the dense microstructure without void. Although they indicated good characteristics of CTZS thin films by sulfurization using H2S gas atmosphere, it has toxic gas and it needs the maintenance. In order to solve this problem, the precursor thin films were carried out the sulfurization using sulfur powder in the Graphite box. CZTS thin films were grown by the sulfurization process. The sulfurization was used Sulfur powder in graphite box in the S vapor atmosphere. Effects of sulfurization conditions such as amount of Sulfur powder, reaction time, and temperature on the characterizations of MoS2 interfacial layers and CZTS thin films were investigated using X-ray diffraction patterns, transmission electron microscopy, Field emission scanning electron microscopy, and Raman spectra, respectively. From Field emission scanning electron microscopy and transmission electron microscopy results, the MoS2 interfacial layer for the sulfurized CZTS thin films were observed over 500 °C and its thickness increased with increasing sulfurization temperatures. Further the detailed analysis and discussion of MoS2 thin layer such as atomic alignment, defects, and interface of the CZTS/MoS2/Mo structured thin films will be discussed. |
| 저자 | Chang woo Hong1, Seung Wook Shin2, Y. C. Park1, Yeong Yung Yoo1, Jong-Ha Moon1, Jeong Yong Lee2, Jin Hyoek Kim1 |
| 소속 | 1Chonnam National Univ., 2KAIST |
| 키워드 | CZTS; Cu/SnS2/ZnS metallic precursor; Effect sulfurization temperature |
