| 학회 |
한국재료학회 |
| 학술대회 |
2004년 가을 (11/05 ~ 11/05, 인하대학교) |
| 권호 |
10권 2호 |
| 발표분야 |
반도체 II(화합물) |
| 제목 |
펄스 레이저 증착(PLD)법에 의한 ZnO:Li 박막 성장과 점결함 |
| 초록 |
ZnO:Li epilayer were synthesized by the pulesd laser deposition(PLD) process on Al2O3 substrate after irradiating the surface of the ZnO:Li sintered pellet by the ArF(193nm) excimer laser. The substrate temperatures was 400℃. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO:Li epilayer measured with Hall effect by van der Pauw method are 8.72×1016 cm-3 and 285 cm2/V․s at 293K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 3.3973 eV - (2.71 × 10-4 eV/K)T2/(T + 475K). After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of VZn, VO, Znint, and Oint obtained by PL measurements were classified as a donors or acceptors type. |
| 저자 |
홍광준1, 정준우1, 강종욱1, 방진주1, 여희숙1, 김현1, 이기상2
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| 소속 |
1조선대, 2(주)대호 |
| 키워드 |
ZnO:Li epilayer; pulesd laser deposition(PLD); carrier density; mobility; point defects
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| E-Mail |
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