| 초록 |
p-n heterostructure design based on Cu2O/ZnO film for enhanced photoelectrochemical and photoelectrocatalytic activities is reported, which mainly consists of four layers of Au film, TiO2 film, Cu2O film, and Au NPs. p-type Cu2O film and n-type ZnO film are produced by using electrodeposition and atomic layer deposition. The electrodeposition of Cu2O acquired high carrier concentration, resulting in large internal electric field between Cu2O and ZnO interface, which led to high charge separation efficiency of photogenerated charge carriers. The Au/Cu2O/ZnO/Au NPs film shows a remarkable enhancement in the photocurrent density in the UV-visible region, compared with bare ZnO film. The high performance is due to the optimized design of the metal-hetero junction structure, where the surface plasmon resonance efficiently absorb visible light and separate electron-hole pairs in the photoelectrode. |
