| 초록 |
ZnO has been emerged as an attractive candidate to replace ITO(Indium Tin Oxide), and it has receive great interest for large area optoelectronic devices of flat panel display(FPD), LED(Light Emitting Diode) and as a transparent semiconductor and transparent conductive oxide(TCO) in solar cells. In this work, Mg and Ga co-doped ZnO thin films were prepared on soda lime glass(SLG) substrate using RF magnetron sputtering system. Mg content was varied from 1.0 wt% to 3.0 wt% in the interval of 0.2 wt% and keeping constant RF power of 40W. The process pressure is maintained at 5 mTorr. The thin film expects to have different characteristics, and previous study showed a remarkable difference. Particularly, in electrical characteristics, the resistivity changed greatly, and in optical properties revealed a large band gap difference. Based on the results of these previous studies, we will proceed with the experiment, and we will proceed with the analysis using XRD, SEM, UV-vis and Hall-measurement. |
