학회 | 한국재료학회 |
학술대회 | 2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
권호 | 24권 2호 |
발표분야 | G. 나노/박막 재료 분과 |
제목 | Antireflection structures for silicon coupling lens in near-infrared region using AlOx/TiOx bilayer and SiNx single layer |
초록 | Silicon photonics has experienced rapid development with the progress of silicon (Si) technologies. In particular, the development of high-speed optical transceivers has attracted significant interest. Copper wiring for data transmission is currently replaced by Si-based optical fiber. Optical signals using light, instead of electrical signals, have been developed for communication. In general, when light from a light source is incident on an optical fiber, approximately 1.2 dB of the light intensity is lost. In order to reduce this loss, an optical coupling lens is used. Owing to the advancement of silicon photonics, Si is mainly used for optical coupling lenses. In Si, approximately 40% of the light intensity is lost owing to reflections at wavelengths of 1310 nm and 1550 nm, which are mainly used in optical communication. One approach to reduce the reflection loss is to introduce an antireflection (AR) coating on the lens surface. In this study, we investigated the possibility of using an AlOx/TiOx bilayer and SiNx single layer as AR structures for Si, focusing on the wavelengths of 1270–1330 nm. The thicknesses of each layer were optimized by simulations using the Essential Macleod software. For experimental demonstration, atomic layer deposition (ALD) was used for the growth of AlOx and TiOx, plasma enhanced chemical vapor deposition was used for the growth of SiNx. The AR structures lowered the reflectance, close to 0%, at the wavelength band of 1270–1330 nm, which enabled an increase of the transmittance by approximately 40%, compared with bare Si. Despite the low reflectance close to 0%, transmittance of ~88%, which is slightly lower than expected, was obtained in AlOx/TiOx structure. An additional air annealing at 300 °C for 2 h led to a crystallization of the amorphous TiOx into anatase phase, which yielded an improved transmittance of ~99%. |
저자 | 김용태, 허재영 |
소속 | 전남대 |
키워드 | Antireflection structure; AlO<SUB>x</SUB>; TiO<SUB>x</SUB>; SiN<SUB>x</SUB> |