| 초록 |
Recently, it reported on high-k dielectric material for spin-coating method. In this study, we had demonstrated a solution-processed high-k dielectric material, zirconium oxide, hafnium oxide, Aluminium oxide for dip-coating method. These film are fabricated via solution processes and had a low gate leakage current density than spin-coating method. Also, it had large electrical capacitance and thermal stability. Thin-film transistors(TFTs) fabricated with organic semiconductors and inorganic semiconductors exhibited high mobility and high current on-off ratios. Furthermore, these devices function well at low voltages. |
