화학공학소재연구정보센터
학회 한국재료학회
학술대회 2011년 가을 (10/27 ~ 10/29, 신라대학교)
권호 17권 2호
발표분야 E. Structural Materials and Processing Technology(구조재료 및 공정기술)
제목 Temperature dependence of photocurrent energy for CdIn2Te epilayers
초록 A CdIn2Te4 single crystal has been grown by the Bridgman method without a seed crystal in a three-stage vertical electric furnace. From photocurrent measurements, it was found that three peaks, A, B, and C, corresponded to an intrinsic transition due to the band-to-band transition from the valence band states Γ7(A), Γ6(B), and Γ7(C) to the conduction band state Γ6, respectively. Also, the valence band splitting of the CdIn2Te4 crystal has been confirmed by photocurrent spectroscopy. The crystal field splitting and the spin orbit splitting were obtained to be 0.2360 and 0.1119 eV, respectively. Also, the temperature dependence of the band gap energy of the CdIn2Te4 crystal has been driven as the following equation of Eg(T)¦= Eg(0) – (9.43 ×10-3)T2/(2676 + T).
저자 Kwangjoon Hong
소속 Department of physics Chosun Univ.
키워드 Bridgman method; photocurrent; band gap energy
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