| 초록 |
The reversible electron transfer of redox proteins are caused by the heme structure which consists of an iron atom surrounded with large cyclic organic rings. Heme is the important components of redox proteins such as hemoglobin, myoglobin, etc.In this study, we obtained flash memory fabrication by utilizing redox proteins as a charge-trapping layer. The fabrication procedures for the charge trapping layers were based on simple solution processes at room temperature. As a result, experimental results showed good programmable memory characteristics with a large memory window. This approach could potentially be applied to flexible bio-electronics. |
