| 학회 |
한국고분자학회 |
| 학술대회 |
2022년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
47권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Metal Chalcogenide based- Photoresists with Chemical Amplified Ligand |
| 초록 |
Photoresist (PR) is a photosensitive material used in photolithography to form a patterned circuit. Polymer-based PRs are the current standard material. However, these PRs are low tolerance to etching conditions at short wavelength such as extreme UV (EUV). Then metal oxide-based PRs are considered to be one of the candidates to higher etch resistance at short wavelength, but these PRs have low photosensitivity at EUV. Metal chalcogenide can be expected to be great substitute PR material than the metal oxide-based PR due to high light absorption at EUV. In this study, we synthesize metal chalcogenide compounds introduced with chemical amplified ligand (CAL). When CAL is exposed to light, it is occurred decomposition then converting a photoacid generator (PAG). PAG promotes the condensation reaction of the metal chalcogenide that is insoluble in water and organic solvents. As a result, we confirmed that CAL-introduced metal chalcogenide compounds functioned successfully as negative PR. |
| 저자 |
전승주1, 김예진2, 황도훈2, 김명길1, 임보규3
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| 소속 |
1부산대, 2한국화학(연), 3성균관대 |
| 키워드 |
Photoresist; Metal Chalcogenide; Chemical Amplifide Ligand
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| E-Mail |
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