| 학회 |
한국화학공학회 |
| 학술대회 |
2022년 봄 (04/20 ~ 04/23, 제주국제컨벤션센터) |
| 권호 |
28권 1호, p.1404 |
| 발표분야 |
[주제 12] 화학공학일반(부문위원회 발표) |
| 제목 |
Tailoring Electronic Properties of Nickel Oxide Nanoparticles for Efficient All-inorganic Quantum Dot Light-Emitting Diodes |
| 초록 |
Industrial demand for stable and efficient quantum dot (QD) light-emitting diodes (QLEDs) has led to development of inorganic charge transport layers promising high chemical and electrical robustness. In state-of-the-art QLEDs, the only vulnerable constituent remains organic hole transport layer (HTL); many studies have pointed out operational instability of organic HTLs that cause gradual deterioration of charge balance under long-term device operation. Although several metal oxide HTLs have been employed in QLEDs, device performance and stability are still lagging behind those of organic HTLs, perhaps due to their electrical mismatch to typical Zn(Mg)O-based electron transport layer (ETL). In this study, we propose doped NiO nanoparticles as a promising candidates for inorganic HTLs. We found huge hole injection barrier at the QD–NiO interface, originating from low ionization potential and Fermi level of NiO against QDs. Mg and/or Cu doping allowed us to optimize charge injection barrier and carrier concentration of NiO HTLs to those of ETLs. We believe that the library of HTLs composed of doped NiO offers a huge leap towards more efficient and stable all-inorganic QLEDs. |
| 저자 |
정운호1, 최영호1, 이현준2, 권용우1, 임재훈1
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| 소속 |
1성균관대, 2카이스트 |
| 키워드 |
재료(Materials) |
| E-Mail |
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| 원문파일 |
초록 보기 |
