학회 | 한국화학공학회 |
학술대회 | 2006년 봄 (04/20 ~ 04/21, 대구 인터불고 호텔) |
권호 | 12권 1호, p.820 |
발표분야 | 유동층 |
제목 | Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition of TiO2 Films on Silica Gel Powders in a Circulating Fluidized Bed Reactor |
초록 | Uniform TiO2 film deposition on silica gel powders has been developed by using Plasma Enhanced Chemical Vapor Deposition (PECVD) in a Circulating Fluidized Bed (CFB) reactor (18 mm-ID × 1000 mm-high). TiO2 films on silica gel (100 μm) powders were deposited by using precursor Ti(O-i-C3H7)4 (TTIP, 98%, Junsei) and oxygen as a reaction gas. Helium gas (99.999%) was used as a plasma generation gas. The optimum reaction conditions for deposition of TiO2 thin films have been determined with variations of plasma power, oxygen concentration and argon concentration. Argon concentration mainly affect to make a uniform thin films, which has a role to expand plasma volume. Based on the data from scanning electron microscope (SEM), EDS, XPS and Raman scattering spectroscopy analyses, the TiO2 crystals are most evenly distributed on the surface of silica gel powders at argon concentration of 8.18 vol%. |
저자 | 김국희1, 박성희2, 김상돈1 |
소속 | 1한국과학기술원, 2우석대 |
키워드 | PECVD; TiO2; CFB |
원문파일 | 초록 보기 |