| 학회 |
한국고분자학회 |
| 학술대회 |
2017년 봄 (04/05 ~ 04/07, 대전컨벤션센터) |
| 권호 |
42권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Enhanced Ferroelectric Property of PVDF Thin Film Using Facile Two-step Annealing Process |
| 초록 |
We report a facile two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films (200 nm). A few papers have discussed the preparation and application of neat PVDF thin films by conventional spin coating or by the wire-bar coating method. The focus of these previous studies was on the preparation of smooth thin films that would be suitable for microelectronic applications, or on achieving a ferroelectric phase. Here, the proposed two-step annealing scheme comprises the crystallization of the ferroelectric gamma-phase during the first step and enhancement of the PVDF film dense morphology during the second step. Moreover, when we extended the processing time of the second step, we obtained good hysteresis curves down to 1 Hz, the first such report for ferroelectric PVDF films. The PVDF films also exhibit a coercive field of 113 MVm−1 and a ferroelectric polarization of 5.4 μCcm−2. |
| 저자 |
박지훈1, Husam Niman Alshareef2
|
| 소속 |
1연세대, 2KAUST |
| 키워드 |
PVDF; ferroelectric; phase; nonvolatile memory
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| E-Mail |
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